Ultra‐thin ISFET‐based sensing systems

The ion-sensitive field effect transistors (ISFETs), proposed little over 50 years ago, today make the most promising devices for lab-on-a-chip, implantable, and point-of-care (POC) diagnostics. Their compatibility with CMOS (Complementary Metal Oxide Semiconductor) technology low cost through mass production have been driving factors so far. Nowadays, they are also being developed in flexible form new applications such as wearables to improve effective usage existing implantable systems. In this regard, ultra-thin chip (UTC) bonding by printing noteworthy advances. This paper comprehensively reviews developments CMOS-compatible ISFETs, along their theory, readout circuitries, circuit-based techniques compensation of ISFET's instabilities, offset, flicker noise, drift. sensing mechanisms properties interface between electrolyte under test metal-oxide based electrodes discussed a brief overview pH sensors. An reported mechanically sensors, including is provided history ISFET covered. Finally, established models that can be used design circuits presented, possible opportunities use circuit compensate mechanical deformation discussed.